Geoffrey P. Summers
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ProfessorDean of the College of Natural and Mathematical SciencesD.Phil, Oxford University, 1969Postdoctoral work at University of North Carolina at Chapel Hill.
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Contact Information
Office of the Dean UC 116, University Center Univ. Maryland Baltimore County 1000 Hilltop Circle Baltimore, MD 21250
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Research Interests
Efficient operation of electronic devices depends on the controlled inclusion of dopant atoms, and on the elimination of unwanted impurities and structural defects in the constituent semiconductors. Semiconductor devices used in earth satellites, however, are subjected to irradiation by particles in the Van Allen belts, which degrade their performance by introducing radiation-induced defects. Understanding the properties of radiation-induced defects in semiconductors is therefore essential in optimizimg the survivability of space electronics as well as being an interesting part of materials research.Deep level transient spectroscopy (DLTS) is a powerful tool for studying defect properties in semiconductor junctions such as those found in solar cells and other devices, and can be used to measure defect introduction rates, annealing kinetics, and other important properties. When used with other techniques such as the Hall effect, DLTS can give detailed information about the effect of defects on the electrical properties of semiconductors.
Recent research has concentrated on the properties of radiation-induced defects in III-V semiconductors such as InP, GaAs, and combinations of these materials which are important in photonic devices and space photovoltaic systems. The research is performed in collaboration with workers at several outside institutions including the Naval Research Laboratory, the National Renewable Energy Laboratory, and industrial research laboratories.