Prof. Gougousi receives NSF award

Prof. Theodosia Gougousi, an Associate Professor in the Physics Department, has been awarded a $300K, three-year grant (ECCS-1407677) from the National Science Foundation to study the atomic layer deposition of high-quality dielectrics on two-dimensional (2D) atomic crystals such a MoS2 and WSe2 for MOSFET applications. This work will be conducted in collaboration with the group of Prof Qiliang Li of George Mason University and the NIST Center for Nanoscale Science and Technology (CNST). This grant is funded jointly by the Electronics, Photonics, and Magnetic Devices (EPMD) Program in the Division of Electrical, Communications and Cyber Systems (ECCS) and by the Electronic and Photonic Materials (EPM) Program in the Division of Materials Research (DMR). The proposal was selected from among 414 unsolicited proposals submitted to EPMD in the October - November 2013 submission window.