Colloquium: Dr. Burcu Ozden | Penn State Abington
In-Person PHYS 401
Location
Physics : 401
Date & Time
September 18, 2024, 11:00 am – 12:00 pm
Description
TITLE: "Precision in Quantum Engineering: Proton Irradiation for Defect Control in 2D Materials”
ABSTRACT: The exploration of quantum technologies represents a frontier in modern science and engineering, offering unprecedented opportunities for advancements in computation, communication, and sensing. Within this context, the precise engineering of defects in two-dimensional (2D) materials like MoS 2 and WS 2 is paramount. These materials have garnered attention for their potential applications in quantum information science, where manipulating spin qubits and harnessing quantum mechanical properties could revolutionize computational paradigms.
This seminar talk presents an investigation into the engineering of vacancies for creating antisite defects in chemically vapor-deposited (CVD) monolayer MoS 2 and WS 2 through proton irradiation, aiming to enhance their applicability in quantum technologies. By adjusting proton irradiation energies, the research team could manipulate the density and types of defects, specifically vacancies, antisites, and adatoms. The study utilized a combination of aberration-corrected high-resolution scanning transmission electron microscopy (AC-HR-STEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and photoluminescence studies to analyze the effects of proton irradiation qualitatively and quantitatively on these materials. The findings reveal that lower proton irradiation energies lead to an increased density of defects. Furthermore, molecular dynamics simulations complement the experimental results by elucidating the probabilities of defect formation and offering insights into the mechanisms underlying the observed modifications in electronic and optical properties due to irradiation.
In conclusion, the study presented in this talk significantly advances our understanding of defect engineering in 2D materials through proton irradiation, highlighting its potential to modify MoS 2 and WS 2 for quantum technology applications. The ability to control defect types and densities with precision opens new avenues for developing quantum devices, offering promising strategies for overcoming current limitations in quantum computing and sensing. The findings not only contribute to the fundamental science of 2D materials but also underscore the broader implications for the burgeoning field of quantum information science, where engineered defects could play a pivotal role in realizing the full potential of quantum technologies.
ABSTRACT: The exploration of quantum technologies represents a frontier in modern science and engineering, offering unprecedented opportunities for advancements in computation, communication, and sensing. Within this context, the precise engineering of defects in two-dimensional (2D) materials like MoS 2 and WS 2 is paramount. These materials have garnered attention for their potential applications in quantum information science, where manipulating spin qubits and harnessing quantum mechanical properties could revolutionize computational paradigms.
This seminar talk presents an investigation into the engineering of vacancies for creating antisite defects in chemically vapor-deposited (CVD) monolayer MoS 2 and WS 2 through proton irradiation, aiming to enhance their applicability in quantum technologies. By adjusting proton irradiation energies, the research team could manipulate the density and types of defects, specifically vacancies, antisites, and adatoms. The study utilized a combination of aberration-corrected high-resolution scanning transmission electron microscopy (AC-HR-STEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and photoluminescence studies to analyze the effects of proton irradiation qualitatively and quantitatively on these materials. The findings reveal that lower proton irradiation energies lead to an increased density of defects. Furthermore, molecular dynamics simulations complement the experimental results by elucidating the probabilities of defect formation and offering insights into the mechanisms underlying the observed modifications in electronic and optical properties due to irradiation.
In conclusion, the study presented in this talk significantly advances our understanding of defect engineering in 2D materials through proton irradiation, highlighting its potential to modify MoS 2 and WS 2 for quantum technology applications. The ability to control defect types and densities with precision opens new avenues for developing quantum devices, offering promising strategies for overcoming current limitations in quantum computing and sensing. The findings not only contribute to the fundamental science of 2D materials but also underscore the broader implications for the burgeoning field of quantum information science, where engineered defects could play a pivotal role in realizing the full potential of quantum technologies.
