Colloquium: Dr. Alexander Senichev | Purdue University
In-Person PHYS 401
Location
Physics : 401
Date & Time
March 11, 2025, 11:00 am – 12:00 pm
Description
TITLE: "Integrated Quantum Photonics with Engineered Single-Photon Emitters”
ABSTRACT: Photonic quantum platforms offer a scalable approach to quantum information science, leveraging the speed of photons and their robustness against decoherence for efficient quantum communication, computing, and sensing. A key challenge in this field is the development of on-chip photonic elements for the generation, manipulation, and detection of quantum states of light in low-loss, scalable platforms. My research focuses on engineering quantum emitters and their photonic environments in materials compatible with semiconductor manufacturing. Silicon nitride (SiN) has emerged as a leading material for integrated photonics, yet until recently, it lacked intrinsic atomic-like single-photon sources, which required the use of probabilistic nonlinear sources or hybrid integration with other materials. In our research, we demonstrated the discovery and controlled creation of intrinsic color centers in low-autofluorescence SiN, offering high-purity, high-brightness single-photon emission at room temperature [1]. These emitters enable direct integration with SiN photonic platforms [2]. In this talk, I will present advances in quantum emitters within SiN and aluminum nitride (AlN) [3], their integration with photonic circuits, and strategies to optimize their performance for quantum applications.
References
[1] Senichev et al., Sci. Adv. 7, eabj0627 (2021)
ABSTRACT: Photonic quantum platforms offer a scalable approach to quantum information science, leveraging the speed of photons and their robustness against decoherence for efficient quantum communication, computing, and sensing. A key challenge in this field is the development of on-chip photonic elements for the generation, manipulation, and detection of quantum states of light in low-loss, scalable platforms. My research focuses on engineering quantum emitters and their photonic environments in materials compatible with semiconductor manufacturing. Silicon nitride (SiN) has emerged as a leading material for integrated photonics, yet until recently, it lacked intrinsic atomic-like single-photon sources, which required the use of probabilistic nonlinear sources or hybrid integration with other materials. In our research, we demonstrated the discovery and controlled creation of intrinsic color centers in low-autofluorescence SiN, offering high-purity, high-brightness single-photon emission at room temperature [1]. These emitters enable direct integration with SiN photonic platforms [2]. In this talk, I will present advances in quantum emitters within SiN and aluminum nitride (AlN) [3], their integration with photonic circuits, and strategies to optimize their performance for quantum applications.
References
[1] Senichev et al., Sci. Adv. 7, eabj0627 (2021)
[2] Senichev et al., ACS Photonics, 9(10), 3357–3365 (2022)
[3] Senichev et al., APL Quantum 1, 036103 (2024)
