Colloquium: Dr. Shan Wu |University of California | Berkeley

TITLE: Magnetic switching resistance materials

ABSTRACT: Quantum materials are complex systems in which electrons interact strongly and collaboratively. As such, quantum mechanics is dominant in the versatile materials that allow us to explore emergent quantum phenomena and their potential applications in future technologies. Antiferromagnetic (AFM) spintronics is among the newest of quantum technologies, which realize the manipulation of spin-transport in antiferromagnets for memory devices. Recently, the intercalated transition metal dichalcogenide (TMD) antiferromagnet Fe1/3+δNbS2 has shown relevant spintronic features, namely, resistance switching. The original explanation of AFM switching hypothesized that it was driven by a coexisting spin glass phase. Here, I will present our discovery of highly tunable antiferromagnetic orders and discuss how they relate to the observed resistance switching in this material. The rapid change of the magnetic states underlies the sensitive switching behaviors, providing crucial insights on the magnetic ground states that form the basis for understanding the fascinating spintronic behavior. I will also talk about my recent work on this system and open opportunities in the intercalated TMDs as part of the exploration of the spintronic materials.